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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB634 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min) *High Power Dissipation APPLICATIONS *Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage ww w scs .i VALUE -120 -120 -6 -7 -10 60 UNIT V V .cn mi e V IC Collector Current-Continuous A ICM Collector Current-Peak Collector Power Dissipation @ TC=25 Junction Temperature A PC W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB634 MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA; IE= 0 IC= -50mA; RBE= -120 V V(BR)CEO Collector-Emitter Breakdown Voltage -120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A B -1.5 V ICBO Collector Cutoff Current VCB= -80V; IE= 0 -0.1 mA IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE-1 DC Current Gain hFE-2 DC Current Gain fT Current-Gain--Bandwidth Product hFE-1 Classifications C 40-80 D 60-120 w w E 100-200 scs .i w F IC= -1A; VCE= -5V IC= -3A; VCE= -5V IC= -1A; VCE= -5V .cn mi e 40 20 -0.1 mA 320 15 MHz 160-320 isc Websitewww.iscsemi.cn 2 |
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